Strong-field nano-optics

P Dombi, Z Pápa, J Vogelsang, SV Yalunin, M Sivis… - Reviews of Modern …, 2020 - APS
The present status and development of strong-field nano-optics, an emerging field of
nonlinear optics, is discussed. A nonperturbative regime of light-matter interactions is …

Carbon-related materials: graphene and carbon nanotubes in semiconductor applications and design

M Kolahdouz, B Xu, AF Nasiri, M Fathollahzadeh… - Micromachines, 2022 - mdpi.com
As the scaling technology in the silicon-based semiconductor industry is approaching
physical limits, it is necessary to search for proper materials to be utilized as alternatives for …

Time-domain observation of ballistic orbital-angular-momentum currents with giant relaxation length in tungsten

TS Seifert, D Go, H Hayashi, R Rouzegar… - Nature …, 2023 - nature.com
The emerging field of orbitronics exploits the electron orbital momentum L. Compared to
spin-polarized electrons, L may allow the transfer of magnetic information with considerably …

Graphene transistors

F Schwierz - Nature nanotechnology, 2010 - nature.com
Graphene has changed from being the exclusive domain of condensed-matter physicists to
being explored by those in the electron-device community. In particular, graphene-based …

Optical-field-induced current in dielectrics

A Schiffrin, T Paasch-Colberg, N Karpowicz, V Apalkov… - Nature, 2013 - nature.com
The time it takes to switch on and off electric current determines the rate at which signals can
be processed and sampled in modern information technology,,,. Field-effect transistors,,,, are …

Graphene transistors: status, prospects, and problems

F Schwierz - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
Graphene is a relatively new material with unique properties that holds promise for
electronic applications. Since 2004, when the first graphene samples were intentionally …

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

J Yoon, S Jo, IS Chun, I Jung, HS Kim, M Meitl… - Nature, 2010 - nature.com
Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for
many applications, owing to their direct bandgaps and high electron mobilities. Examples …

Radiofrequency transistors based on aligned carbon nanotube arrays

H Shi, L Ding, D Zhong, J Han, L Liu, L Xu, P Sun… - Nature …, 2021 - nature.com
The development of next-generation wireless communication technology requires integrated
radiofrequency devices capable of operating at frequencies greater than 90 GHz. Carbon …

Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics

CW Cheng, KT Shiu, N Li, SJ Han, L Shi… - Nature …, 2013 - nature.com
Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenide
substrates and has been extensively explored to avoid the high cost of III–V devices by …

Nanotube electronics for radiofrequency applications

C Rutherglen, D Jain, P Burke - Nature nanotechnology, 2009 - nature.com
Electronic devices based on carbon nanotubes are among the candidates to eventually
replace silicon-based devices for logic applications. Before then, however, nanotube-based …