Advances in GeSn alloys for MIR applications

V Reboud, O Concepción, W Du, M El Kurdi… - Photonics and …, 2024 - Elsevier
Silicon photonics is widely used for near InfraRed (IR) applications up to 1.6 µm. It plays a
key role in short-range optical data communications. However, silicon photonics does not …

[HTML][HTML] Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon

MRM Atalla, C Lemieux-Leduc, S Assali, S Koelling… - APL Photonics, 2024 - pubs.aip.org
There is an increasing need for silicon-compatible high-bandwidth extended-short wave
infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable …

[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties

A Giunto, A Fontcuberta i Morral - Applied Physics Reviews, 2024 - pubs.aip.org
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

GeSn μ-LED Array with Programmable Spectra for Near-Infrared Microspectrometer

X Liu, Q Huang, J Zheng, J Cui, Y Zhu, Y Yang… - ACS …, 2025 - ACS Publications
Spectrometers are important analytical instruments in research fields involving light and
matter, and their miniaturization is critical for portable and on-chip applications …

Advances in 2D heterostructures for quantum computing applications: A review

A Islam, S Khan, JJ Mim, F Akter, S Islam… - Inorganic Chemistry …, 2025 - Elsevier
Atomically thin materials, within their two-dimensional (2D) heterostructures, have become
fundamental to the advancement of quantum computing technology. These structures …

High-Performance Germanium-Tin Fabry-Perot Microcavity Strip Loaded Mid Infrared Waveguide-based Optical Sensors

H Kumar, N Soni, AK Pandey… - IEEE Sensors Journal, 2024 - ieeexplore.ieee.org
This work proposes and theoretically investigates the efficacy of gratings-based strip-loaded
germanium-tin (Ge Snx) waveguides (WGs) as gas sensors for the mid-infrared (MIR) …

Absorption and quantum efficiency of GeSn nanopillar arrays for infrared detectors

J He, L Liu, Z Wang, J Tian, Z Cao - Physica Scripta, 2024 - iopscience.iop.org
This research investigates the optical absorption and quantum efficiency of germanium-tin
(GeSn) materials with a tin (Sn) content of 4.5%, and their potential applications in infrared …

Ge0. 75Sn0. 25 on insulator metal-semiconductor-metal photodetector by layer transfer technique

T Maeda, H Ishii, WH Chang, K Takagi… - Japanese Journal of …, 2025 - iopscience.iop.org
Abstract The Ge 0.75 Sn 0.25 alloy, which is lattice matched to the InP, has the potential to
create a high-quality GeSn-on-insulator (GeSnOI) structure for group IV optoelectronic …