van der Waals atomically thin magnetic materials have been recently discovered. They have
attracted enormous attention as they present unique magnetic properties, holding potential …

Increasing demand for every faster information throughput is driving the emergence of
integrated photonic technology. The traditional silicon platform used for integrated …

The integration of III–V semiconductors (eg, GaAs and GaN) and silicon-on-insulator (SOI)-
CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is …

A method to remove the misfit dislocations and reduce the threading dislocations density
(TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The …

A scalable method to fabricate germanium on insulator (GOI) substrate through epitaxy,
bonding, and layer transfer is reported. The germanium (Ge) epitaxial film is grown directly …

We investigate the effect of surface tunneling on charge distributions of two-dimensional
hole gases (2DHGs) in undoped Ge/GeSi heterostructures. As in the electron channel case …

The integration of III-V semiconductors with silicon is a key issue for photonics,
microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth …

Germanium (Ge)-based photodetectors have become one of the mainstream components in
photonic-integrated circuits (PICs). Many emerging PIC applications require the …

Heterogeneous integration of semiconductors combines the functionality of different
materials, enabling technologies such as III–V lasers and solar cells on silicon and GaN …

We demonstrate the influence of the arsine partial pressure (p (AsH 3)) on the quality of a
GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs …