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Intermediate band solar cells: Recent progress and future directions
Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed.
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …
Quantum dot opto-electronic devices
P Bhattacharya, S Ghosh… - Annu. Rev. Mater …, 2004 - annualreviews.org
▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
We have developed a technique to fabricate quantum dot (QD) solar cells with direct do**
of Si into InAs QDs in GaNAs strain-compensating matrix in order to control the quasi-Fermi …
of Si into InAs QDs in GaNAs strain-compensating matrix in order to control the quasi-Fermi …
Far-infrared photoconductivity in self-organized InAs quantum dots
We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by
molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a …
molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a …
Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In, Ga) As/Ga (As, P) quantum dot solar cells
The intermediate-band solar cell (IBSC) concept has been recently proposed to enhance the
current gain from the solar spectrum whilst maintaining a large open-circuit voltage. Its main …
current gain from the solar spectrum whilst maintaining a large open-circuit voltage. Its main …
Self-assembled InAs-GaAs quantum-dot intersubband detectors
The use of self-assembled InAs-GaAs quantum dots in photoconductive intersubband
detectors in the far-infrared is presented. Far-infrared absorption is observed in self …
detectors in the far-infrared is presented. Far-infrared absorption is observed in self …
Characteristics of InGaAs quantum dot infrared photodetectors
A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum
dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for …
dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for …
Review of experimental results related to the operation of intermediate band solar cells
The intermediate band solar cell (IBSC) has drawn the attention of the scientific community
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …
Quantum-dot infrared photodetectors: a review
Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important
technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost …
technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost …
Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector
We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure
metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum …
metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum …