Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Dielectric electrostatic capacitors, because of their ultrafast charge–discharge, are desirable
for high-power energy storage applications. Along with ultrafast operation, on-chip …

Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

HfO2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …

The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …

The structural, thermal, and dielectric properties of the ferroelectric phase of HfO 2, ZrO 2,
and Hf 0.5 Zr 0.5 O 2 (HZO) are investigated with carefully validated density functional …

Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating
ferroelectric layers and integrating them into complementary metal oxide semiconductor …