The multiferroic bismuth ferrite (BiFeO 3, denoted as BFO) semiconductors have attracted
prominent recognition due to their unique physical properties and prospective industrial …

HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Unconventional ferroelectricity in fluorite‐structure oxides enables tremendous opportunities
in nanoelectronics owing to their superior scalability and silicon compatibility. However, their …

Phase identification in HfO2-based thin films is a prerequisite to understanding the
mechanisms stabilizing the ferroelectric phase in these materials, which hold great promise …

HfO 2-based ferroelectric thin films are promising for their application in ferroelectric devices.
Predicting the ultimate magnitude of polarization and understanding its switching …

Ferroelectricity in binary oxides including hafnia and zirconia has riveted the attention of the
scientific community due to the highly unconventional physical mechanisms and the …

Ferroelectricity observed in thin-film HfO2, either doped with Si, Al, and so forth or in the Hf0.
5Zr0. 5O2 form, has gained great technical significance. While a trilinear coupling between …

Piezoelectrics are a class of functional materials that have been extensively used for
application in modern electro-mechanical and mechatronics technologies. The sign of …

Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions
in Hf1-xZrxO2 by first principle calculations | Applied Physics Reviews | AIP Publishing Skip …