Light induced charge transport property analysis of nanostructured ZnS based Schottky diode
In this report we have investigated the light sensing behavior and also discussed the
induced charge transport phenomena through the junction made by aluminium and …
induced charge transport phenomena through the junction made by aluminium and …
Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure
The electrical and dielectric properties of Al/SiO2/p-Si (MOS) structures were studied in the
frequency range 10kHz–10MHz and in the temperature range 295–400K. The interfacial …
frequency range 10kHz–10MHz and in the temperature range 295–400K. The interfacial …
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
The temperature effect on the conduction mechanism of Au/Cu 2 O–CuO–PVA/n-Si (MPS)
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
Metal–insulator–semiconductor diode consisting of two-dimensional nanomaterials
We present a novel metal–insulator–semiconductor (MIS) diode consisting of graphene,
hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS …
hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS …
Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer
In this study, the electronic properties of Au/n-Si (MS) and Au/(In 2 O 3-PVP)/n-Si (MPS)
diode have been investigated to see the effects of an organic (In 2 O 3-PVP) interlayer by …
diode have been investigated to see the effects of an organic (In 2 O 3-PVP) interlayer by …
The investigation of current-transport mechanisms (CTMs) in the Al/(In2S3:PVA)/p-Si (MPS)-type Schottky barrier diodes (SBDs) at low and intermediate …
The current-transport mechanisms (CTMs) and temperature sensitivities (S) of the Al/(In2S3-
PVA)/p-Si SBDs have been investigated using I–V measurements between 80 and 320 K …
PVA)/p-Si SBDs have been investigated using I–V measurements between 80 and 320 K …
Review and tests of methods for the determination of the solar cell junction ideality factors
M Bashahu, P Nkundabakura - Solar energy, 2007 - Elsevier
Up to 22 methods for the determination of the solar cell ideality factor, n, have been
presented in this paper. Most of them use the single-exponential diode model, static mode …
presented in this paper. Most of them use the single-exponential diode model, static mode …
Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer
In this research, for determining the effects of the (Gr-PVP) interfacial layer, two types of
diodes (Au/n-Si and Au/(Gr-PVP)/n-Si) were performed on the same n-Si wafer with the …
diodes (Au/n-Si and Au/(Gr-PVP)/n-Si) were performed on the same n-Si wafer with the …
Photovoltaic properties of the organic–inorganic photodiode based on polymer and fullerene blend for optical sensors
F Yakuphanoglu - Sensors and Actuators A: Physical, 2008 - Elsevier
Inorganic–organic photodiode was fabricated with blend single layer as well as sandwich
structure, using p-Si and poly (2-methoxy-5-(20-ethylhexyloxy)-1, 4-phenylenevinylene) …
structure, using p-Si and poly (2-methoxy-5-(20-ethylhexyloxy)-1, 4-phenylenevinylene) …
Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements
The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–
semiconductor (Sn/p-Si) Schottky contacts were measured in the temperature range 150 …
semiconductor (Sn/p-Si) Schottky contacts were measured in the temperature range 150 …