Electronic spins provide an additional degree of freedom that can be used in modern spin-
based electronic devices. Some benefits of spintronic devices include nonvolatility, energy …

Conventional computing architectures based on the von Neumann structure are suffering
from the severe 'memory wall'issue due to the isolation and speed mismatch between …

Continued scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuit
technology is slowing down due to physical limitations, while the static power of CMOS …

The separation of memory and computing units in the von Neumann architecture leads to
undesirable energy consumption due to data movement and insufficient memory bandwidth …

This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-
Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from …

This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random
access memory (MRAM) by sharing the SOT channel and write transistor among multiple …

Hamming code is a linear error correcting code that is widely used in memory and
communication systems. In general, a codec hardware is required to encode or decode the …

While magnetic random-access memories (MRAMs) are promising because of their
nonvolatility, relatively fast speeds, and high endurance, there are major challenges in …

Spin–orbit torque (SOT) magnetic random access memory is envisioned as an emerging
nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free …

On the current computing platforms, the memory wall between processor and memory has
become the toughest challenge for the traditional Von-Neumann computer architecture …