US11114332B2 - Semiconductor on insulator structure comprising a plasma nitride layer and
method of manufacture thereof - Google Patents US11114332B2 - Semiconductor on insulator …

5,061,644 5,079,616 5,091,333 5,091,767 5,093,699 5,098,850 5,105,247 5,108,947
5,156,995 5,159,413 5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 …

This invention describes an integration scheme for advanced CMOS technology which
incorporates a high mobility strained Ge buried channel structure, leading to PMOS device …

2011-12-06 Assigned to MONOLITHIC 3D INC. reassignment MONOLITHIC 3D INC.
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

(57) ABSTRACT A semiconductor circuit structure includes a Support Sub strate which
carries an interconnect region and electronic circuitry. The semiconductor circuit structure …

(57) ABSTRACT A semiconductor memory device includes a Substrate and an interconnect
region carried by the Substrate. A donor layer is coupled to the interconnect region through …

(57) ABSTRACT A method includes forming a Switching device which includes a vertical
channel spaced apart from a semiconduc tor Substrate, and forming a storage device which …

(57) ABSTRACT A method of forming a bonded semiconductor structure cir cuit includes
providing a Support Substrate which carries a first semiconductor circuit and providing a first …

An information storage system includes a bonded semicon ductor structure having a
memory circuit region carried by an interconnect region. The memory circuit region includes …

Related US Application Data now abandoned, and a continuation-in-part of applica tion No.
1 1/378,059, filed on Mar. 17, 2006, and a continuation-in-part of application No. 1 …