A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Phase‐change superlattice materials toward low power consumption and high density data storage: microscopic picture, working principles, and optimization

XB Li, NK Chen, XP Wang… - Advanced Functional …, 2018 - Wiley Online Library
To meet the requirement of big data era and neuromorphic computations, nonvolatile
memory with fast speed, high density, and low power consumption is urgently needed. As an …

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

K Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai… - Nature …, 2021 - nature.com
Phase change memory (PCM) is a rapidly growing technology that not only offers
advancements in storage-class memories but also enables in-memory data processing to …

Phase change thin films for non-volatile memory applications

A Lotnyk, M Behrens, B Rauschenbach - Nanoscale Advances, 2019 - pubs.rsc.org
The rapid development of Internet of Things devices requires real time processing of a huge
amount of digital data, creating a new demand for computing technology. Phase change …

Enabling active nanotechnologies by phase transition: from electronics, photonics to thermotics

C Zheng, RE Simpson, K Tang, Y Ke, A Nemati… - Chemical …, 2022 - ACS Publications
Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and
chalcogenides when there is a change in external conditions such as temperature and …

“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization

J Feng, A Lotnyk, H Bryja, X Wang, M Xu… - … Applied Materials & …, 2020 - ACS Publications
Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance
but remains insufficient of the operating speed to replace cache memory (the fastest memory …

Boosting Thermoelectric Performance of Bi2Te3 Material by Microstructure Engineering

G Wang, F Meng, Y Chen, A Lotnyk… - Advanced …, 2024 - Wiley Online Library
Due to the intrinsic contradiction of electrical conductivity and Seebeck coefficient in
thermoelectric materials, the enhancement for the power factor (PF) is limited. Since the PF …

High‐Stability van Der Waals Structures of GeTe/Sb2Te3 Superlattices for 100× Increased Durability Phase‐Change Memory (PCM) by Low‐Temperature Atomic …

RJ Zhu, RZ Zhao, K Gao, ZR Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The superlattices phase‐change memory (SL‐PCM), based on GeTe/Sb2Te3 superlattices
(SLs), garners considerable attention within the academic community owing to its …

Temperature dependent evolution of local structure in chalcogenide-based superlattices

A Lotnyk, I Hilmi, M Behrens, B Rauschenbach - Applied Surface Science, 2021 - Elsevier
Interfacial phase change memory utilizing chalcogenide-based superlattices (CSLs) offers
outstanding device performance and is an emerging contender to replace conventional …

Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices

AV Kolobov, P Fons, Y Saito, J Tominaga - ACS omega, 2017 - ACS Publications
Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is
currently a key element of various electronics and portable systems. An important step in the …