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A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Phase‐change superlattice materials toward low power consumption and high density data storage: microscopic picture, working principles, and optimization
To meet the requirement of big data era and neuromorphic computations, nonvolatile
memory with fast speed, high density, and low power consumption is urgently needed. As an …
memory with fast speed, high density, and low power consumption is urgently needed. As an …
Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
Phase change memory (PCM) is a rapidly growing technology that not only offers
advancements in storage-class memories but also enables in-memory data processing to …
advancements in storage-class memories but also enables in-memory data processing to …
Phase change thin films for non-volatile memory applications
A Lotnyk, M Behrens, B Rauschenbach - Nanoscale Advances, 2019 - pubs.rsc.org
The rapid development of Internet of Things devices requires real time processing of a huge
amount of digital data, creating a new demand for computing technology. Phase change …
amount of digital data, creating a new demand for computing technology. Phase change …
Enabling active nanotechnologies by phase transition: from electronics, photonics to thermotics
Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and
chalcogenides when there is a change in external conditions such as temperature and …
chalcogenides when there is a change in external conditions such as temperature and …
“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization
Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance
but remains insufficient of the operating speed to replace cache memory (the fastest memory …
but remains insufficient of the operating speed to replace cache memory (the fastest memory …
Boosting Thermoelectric Performance of Bi2Te3 Material by Microstructure Engineering
G Wang, F Meng, Y Chen, A Lotnyk… - Advanced …, 2024 - Wiley Online Library
Due to the intrinsic contradiction of electrical conductivity and Seebeck coefficient in
thermoelectric materials, the enhancement for the power factor (PF) is limited. Since the PF …
thermoelectric materials, the enhancement for the power factor (PF) is limited. Since the PF …
High‐Stability van Der Waals Structures of GeTe/Sb2Te3 Superlattices for 100× Increased Durability Phase‐Change Memory (PCM) by Low‐Temperature Atomic …
RJ Zhu, RZ Zhao, K Gao, ZR Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The superlattices phase‐change memory (SL‐PCM), based on GeTe/Sb2Te3 superlattices
(SLs), garners considerable attention within the academic community owing to its …
(SLs), garners considerable attention within the academic community owing to its …
Temperature dependent evolution of local structure in chalcogenide-based superlattices
Interfacial phase change memory utilizing chalcogenide-based superlattices (CSLs) offers
outstanding device performance and is an emerging contender to replace conventional …
outstanding device performance and is an emerging contender to replace conventional …
Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices
Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is
currently a key element of various electronics and portable systems. An important step in the …
currently a key element of various electronics and portable systems. An important step in the …