The electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT: MEH-
PPV/Al organic devices have been investigated by current–voltage and capacitance …

The Schottky barrier junctions of tin disulfide (SnS2) on p-silicon were fabricated using sol–
gel spin technique. The photoresponse and junction properties of the diode were …

Capacitance–voltage measurements were carried out on Schottky diodes fabricated on
undoped and on metal-doped p-type silicon. The metals used are gold, platinum, erbium …

Nickel sulfide nanoparticle-loaded activated carbon (NiS-NP-AC) were synthesized as a
novel adsorbent for simultaneous and rapid adsorption of Methylene blue (MB) and Safranin …

Schottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was
fabricated. The current–voltage characteristics of the diode were investigated under dark …

Abstract The Co/pentacene/n-Si/Al device with the Co/n-Si/Al device was fabricated and
characterized by current-voltage measurements to understand the effect of the pentacene on …

Al/p-Si/copper phthalocyanine photovoltaic device has been fabricated and characterised by
current–voltage and capacitance–voltage measurements. Electrical properties of the device …

We study how tris (8-hydroxyquinolinato) aluminum organic semiconductor layer at p-
silicon/Al interface can affect electrical transport across this interface. Al/Alq3/p-Si device …

The nanocomposites of zinc oxide/graphene oxide (ZnO-GO) were synthesized to fabricate
the photodiodes. The ZnO-GO/p-Si and ZnO-GO/n-Si diodes were prepared for various GO …

Drop casting technique was used to fabricate Al/p-Si/coumarin doped fullerite/Al diodes. The
effects of coumarin do** on the photoresponse properties of the diodes were investigated …