The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …

GaN community has recently recognized that it is imperative that the extended, and point
defects in GaN and related materials, and the mechanisms for their formation are …

Wurtzite GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam
epitaxy on Si (111) and c-sapphire substrates. The nanocolumns density and diameter (600 …

Two schemes of nucleation and growth of gallium nitride on Si (111) substrates are
investigated and the structural and electrical properties of the resulting films are reported …

The growth of high-quality III-nitrides by plasma-assisted molecular beam epitaxy on Si
(111) substrates is addressed. A combination of optimized AlN buffer layers and a two-step …

We report on the growth and properties of GaN films grown on Si (111) substrates by
molecular beam epitaxy using ammonia. The properties of the layers show that our growth …

The influence of the growth parameters on the photoluminescence (PL) spectra has been
investigated for samples with columnar morphology, either with InN columns on original …

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of
thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and …

We apply positron annihilation spectroscopy to identify VN-M g G a complexes as native
defects in<? format?> Mg-doped GaN. These defects dissociate in postgrowth annealings at …