Investigating the valence-band bound states in GaAs/GaAsSb/GaAs V-shaped quantum wells: the role of intense laser fields and position-dependent effective mass
This theoretical study investigated the valence-band electronic features in
GaAs/GaAsSb/GaAs V-shaped quantum wells. Accordingly, an analytical relation has been …
GaAs/GaAsSb/GaAs V-shaped quantum wells. Accordingly, an analytical relation has been …
Investigating the effects of cap** layer on optical gain of nitride based semiconductor nanostructure lasers
In this study, the effects of GaN cap** layer on the behaviour of AlGaN/GaN nanostructure
based laser is considered. We have employed the self-consistent solution of Poisson and …
based laser is considered. We have employed the self-consistent solution of Poisson and …
[PDF][PDF] The Effects of Structural Parameters of GaN Based Asymmetric Multiple Quantum Wells on Optical Gain in Laser Diodes
EA Milani, A Asgari - sid.ir
In this paper, the optical gain of multiple GaN asymmetric quantum well based laser diode
has been investigated. The rate of optical gain in the structure of multiple quantum wells with …
has been investigated. The rate of optical gain in the structure of multiple quantum wells with …