2D transition metal dichalcogenides

S Manzeli, D Ovchinnikov, D Pasquier… - Nature Reviews …, 2017 - nature.com
Graphene is very popular because of its many fascinating properties, but its lack of an
electronic bandgap has stimulated the search for 2D materials with semiconducting …

Optical Properties of 2D Semiconductor WS2

C Cong, J Shang, Y Wang, T Yu - Advanced Optical Materials, 2018 - Wiley Online Library
Abstract 2D semiconductor tungsten disulfide (WS2) attracts significant interest in both
fundamental physics and many promising applications such as light emitters …

Strain effect on circularly polarized electroluminescence in transition metal dichalcogenides

S Wang, MS Ukhtary, R Saito - Physical Review Research, 2020 - APS
Strain effect on circularly polarized electroluminescence (EL) is theoretically analyzed for a
pin junction of transition metal dichalcogenides. The electrically controllable circularly …

Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide

H Li, AW Contryman, X Qian, SM Ardakani… - Nature …, 2015 - nature.com
The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a
new optically active material possessing a band gap that can be facilely tuned via elastic …

Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals

E Blundo, E Cappelluti, M Felici, G Pettinari… - Applied Physics …, 2021 - pubs.aip.org
The variegated family of two-dimensional (2D) crystals has developed rapidly since the
isolation of its forerunner: Graphene. Their planeconfined nature is typically associated with …

Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2

Y Wang, C Cong, W Yang, J Shang, N Peimyoo… - Nano Research, 2015 - Springer
In situ strain photoluminescence (PL) and Raman spectroscopy have been employed to
exploit the evolutions of the electronic band structure and lattice vibrational responses of …

Strain engineering in semiconducting two-dimensional crystals

R Roldán, A Castellanos-Gomez… - Journal of Physics …, 2015 - iopscience.iop.org
One of the fascinating properties of the new families of two-dimensional crystals is their high
stretchability and the possibility to use external strain to manipulate, in a controlled manner …

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

SS Chee, D Seo, H Kim, H Jang, S Lee… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides (TMDCs) have emerged as promising
candidates for post‐silicon nanoelectronics owing to their unique and outstanding …

2D WS2: From Vapor Phase Synthesis to Device Applications

C Lan, C Li, JC Ho, Y Liu - Advanced Electronic Materials, 2021 - Wiley Online Library
The discovery of graphene has triggered the research on 2D layer structured materials.
Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are …

Evidence of the direct-to-indirect band gap transition in strained two-dimensional , , and

E Blundo, M Felici, T Yildirim, G Pettinari… - Physical Review …, 2020 - APS
We report a strain-induced direct-to-indirect band gap transition in mechanically deformed
WS 2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of …