2D transition metal dichalcogenides
Graphene is very popular because of its many fascinating properties, but its lack of an
electronic bandgap has stimulated the search for 2D materials with semiconducting …
electronic bandgap has stimulated the search for 2D materials with semiconducting …
Optical Properties of 2D Semiconductor WS2
C Cong, J Shang, Y Wang, T Yu - Advanced Optical Materials, 2018 - Wiley Online Library
Abstract 2D semiconductor tungsten disulfide (WS2) attracts significant interest in both
fundamental physics and many promising applications such as light emitters …
fundamental physics and many promising applications such as light emitters …
Strain effect on circularly polarized electroluminescence in transition metal dichalcogenides
Strain effect on circularly polarized electroluminescence (EL) is theoretically analyzed for a
pin junction of transition metal dichalcogenides. The electrically controllable circularly …
pin junction of transition metal dichalcogenides. The electrically controllable circularly …
Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide
The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a
new optically active material possessing a band gap that can be facilely tuned via elastic …
new optically active material possessing a band gap that can be facilely tuned via elastic …
Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals
The variegated family of two-dimensional (2D) crystals has developed rapidly since the
isolation of its forerunner: Graphene. Their planeconfined nature is typically associated with …
isolation of its forerunner: Graphene. Their planeconfined nature is typically associated with …
Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2
In situ strain photoluminescence (PL) and Raman spectroscopy have been employed to
exploit the evolutions of the electronic band structure and lattice vibrational responses of …
exploit the evolutions of the electronic band structure and lattice vibrational responses of …
Strain engineering in semiconducting two-dimensional crystals
One of the fascinating properties of the new families of two-dimensional crystals is their high
stretchability and the possibility to use external strain to manipulate, in a controlled manner …
stretchability and the possibility to use external strain to manipulate, in a controlled manner …
Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors
SS Chee, D Seo, H Kim, H Jang, S Lee… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides (TMDCs) have emerged as promising
candidates for post‐silicon nanoelectronics owing to their unique and outstanding …
candidates for post‐silicon nanoelectronics owing to their unique and outstanding …
2D WS2: From Vapor Phase Synthesis to Device Applications
The discovery of graphene has triggered the research on 2D layer structured materials.
Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are …
Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are …
Evidence of the direct-to-indirect band gap transition in strained two-dimensional , , and
We report a strain-induced direct-to-indirect band gap transition in mechanically deformed
WS 2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of …
WS 2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of …