Recent changes in how people consume multimedia services are causing an explosive
increase in mobile traffic. With more and more people using wireless networks, the demand …

We present an overview of solid-state integrated circuit amplifiers approaching terahertz
frequencies based on the latest device technologies which have emerged in the past …

Thanks to the abrupt advances in semiconductor technologies, particularly in terms of the
operating frequency, the last decade has seen various efforts and trials in attempts to …

Ultra-high bandwidth, negligible latency and seamless communication are envisioned as
milestones that will revolutionize the way by which societies create, distribute and consume …

We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP
high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 …

Wireless data rates are expected to be around 10Gbps or even more within the upcoming
decade. The realization of such high data rates is unlikely with the currently licensed bands …

In this paper, background describing THz monolithic integrated circuits using InP HEMT is
presented. This three-terminal transistor technology has been used to realize amplifiers …

In the last couple of decades, solid-state device technologies, particularly electronic
semiconductor devices, have been greatly advanced and investigated for possible adoption …

We report on the development of a 0.25-μm InP HBT IC technology for lower end of the THz
frequency band (0.3-3 THz). Transistors demonstrate an extrapolated f max of>; 800 GHz …

Free space communications with huge data capacity have become a key point for the
development of mobile access, services, and network technologies convergence. Wireless …