Electrodynamics of correlated electron materials

DN Basov, RD Averitt, D Van Der Marel, M Dressel… - Reviews of Modern …, 2011‏ - APS
Studies of the electromagnetic response of various classes of correlated electron materials
including transition-metal oxides, organic and molecular conductors, intermetallic …

Spin-dependent phenomena and device concepts explored in (Ga, Mn) As

T Jungwirth, J Wunderlich, V Novák, K Olejník… - Reviews of Modern …, 2014‏ - APS
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …

Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs

A Richardella, P Roushan, S Mack, B Zhou, DA Huse… - science, 2010‏ - science.org
Electronic states in disordered conductors on the verge of localization are predicted to
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …

Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

D Kitchen, A Richardella, JM Tang, ME Flatté… - Nature, 2006‏ - nature.com
The discovery of ferromagnetism in Mn-doped GaAs has ignited interest in the development
of semiconductor technologies based on electron spin and has led to several proof-of …

Controlling the Curie temperature in (Ga, Mn) As through location of the Fermi level within the impurity band

M Dobrowolska, K Tivakornsasithorn, X Liu… - Nature materials, 2012‏ - nature.com
Abstract The ferromagnetic semiconductor (Ga, Mn) As has emerged as the most studied
material for prototype applications in semiconductor spintronics. Because ferromagnetism in …

[HTML][HTML] Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

M Tanaka, S Ohya, P Nam Hai - Applied Physics Reviews, 2014‏ - pubs.aip.org
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin
degrees of freedom as well as charge transport in materials and devices. While metal-based …

Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission

AX Gray, J Minar, S Ueda, PR Stone, Y Yamashita… - Nature materials, 2012‏ - nature.com
A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is
crucial to their development for applications. Using hard X-ray angle-resolved …

Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs

S Ohya, K Takata, M Tanaka - Nature Physics, 2011‏ - nature.com
The origin of ferromagnetism in the prototype ferromagnetic semiconductor GaMnAs is
controversial because of an insufficient understanding of its band structure and Fermi level …

Recent progress in ferromagnetic semiconductors and spintronics devices

M Tanaka - Japanese Journal of Applied Physics, 2020‏ - iopscience.iop.org
By actively using not only charge transport of electrons and holes but also their spins, we
can create a variety of new phenomena and functional materials. It is highly expected that …

Character of states near the Fermi level in (Ga, Mn) As: Impurity to valence band crossover

T Jungwirth, J Sinova, AH MacDonald… - Physical Review B …, 2007‏ - APS
We discuss the character of states near the Fermi level in Mn-doped GaAs, as revealed by a
survey of dc transport and optical studies over a wide range of Mn concentrations. A …