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STT-MRAM sensing: a review
This brief presents a review of developments in spin-transfer-torque magnetoresistive
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …
Offset-canceling current-sampling sense amplifier for resistive nonvolatile memory in 65 nm CMOS
Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-
generation memory. However, maintaining a target sensing margin is a challenge with …
generation memory. However, maintaining a target sensing margin is a challenge with …
A self-timed voltage-mode sensing scheme with successive sensing and checking for STT-MRAM
In Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), the most
commonly used timing scheme for conventional Voltage-mode Sense Amplifier (VSA) is the …
commonly used timing scheme for conventional Voltage-mode Sense Amplifier (VSA) is the …
Polymorphic hybrid CMOS-MTJ logic gates for hardware security applications
Various hardware security concerns, such as hardware Trojans and IP piracy, have sparked
studies in the security field employing alternatives to CMOS chips. Spintronic devices are …
studies in the security field employing alternatives to CMOS chips. Spintronic devices are …
Fast and efficient offset compensation by noise-aware pre-charge and operation of DRAM bit line sense amplifier
TB Kim, HJ Kim, KW Kwon - … on Circuits and Systems II: Express …, 2022 - ieeexplore.ieee.org
This brief proposes fast and efficient offset compensation for a DRAM bit-line sense
amplifier. Precharging the sense amplifier under the same conditions as the initial offset …
amplifier. Precharging the sense amplifier under the same conditions as the initial offset …
Reconfigurable classifier based on spin-torque-driven magnetization switching in electrically connected magnetic tunnel junctions
A promising branch of neuromorphic computing aims to perform cognitive operations in
hardware, leveraging the physics of efficient and well-established nanodevices. In this work …
hardware, leveraging the physics of efficient and well-established nanodevices. In this work …
Dynamic dual-reference sensing scheme for deep submicrometer STT-MRAM
As process technology downscales, read reliability has become a critical barrier for spin
transfer torque magnetic random access memory (STT-MRAM), owing to the increasing …
transfer torque magnetic random access memory (STT-MRAM), owing to the increasing …
A double-sensing-margin offset-canceling dual-stage sensing circuit for resistive nonvolatile memory
Resistive nonvolatile memory (NVM) devices such as spin transfer torque random access
memory (STT-RAM) and resistive random access memory are considered to be leading …
memory (STT-RAM) and resistive random access memory are considered to be leading …
Rethinking DRAM's page mode with STT-MRAM
Spin torque magnetic random access memory (STT-MRAM) is a promising candidate for
drop-in replacement for DRAM-based main memory because of its higher energy efficiency …
drop-in replacement for DRAM-based main memory because of its higher energy efficiency …
A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices
Y Zhou, Z Zhou, Y Wei, Z Yang, X Lin… - … on Circuits and …, 2023 - ieeexplore.ieee.org
The application of non-volatile memory technology is increasingly attractive for Computing-
in-memory (CIM) owing to high integration density and negligible standby power …
in-memory (CIM) owing to high integration density and negligible standby power …