The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …

Gate-all around (GAA) device is one of the cutting-edge technologies in the present
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …

The electrostatic do** technique has a remarkable ability to reduce random dopant
fluctuations (RDFs), fabrication complexity and high thermal budget requirement in the …

In each complementary metal-oxide-semiconductor (CMOS) technology generation, design
of new device architectures at nanoscale regime becomes quite challenging task due to …

This works shows the effect of different dielectric material which are used in gate dielectric
material in metal oxide semiconductor field effect transistor (MOSFET). Dielectric material …

In this paper, an analytical model for center potential and threshold voltage is developed for
a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by …

This paper investigates the trap analysis of a double-gate extended-source tunnel field-
effect transistor (DG-ESTFET) and single-gate extended-source tunnel field-effect transistor …

In this article, an accurate representation of threshold voltage for double metal double gate
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …

The influence of hetero dielectric gate oxide and work function engineering on DC and
Analog/RF performance of dual material hetero dielectric double gate tunnel field-effect …

In this study, an accurate model for threshold voltage of graded channel dual material
double gate (GCDMDG) structure metal-oxide-semiconductor (MOS) has been established …