We report a low-temperature magneto transport study of Bi2Se3 thin films of different
thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio …

Recent progress in topological insulating materials predicts a promising future for their
applications in develo** innovative quantum, electronic, and optoelectronic devices. The …

The current investigation focuses on Bi2Se3 films grown via a thermal evaporation process
and subsequently annealed at temperatures of 100° C, 150° C, 200° C, and 250° C for 2 h …

Nanostructured heterojunctions are an effective approach to enhance the
photoelectrochemical (PEC) performance of semiconducting materials, as they facilitate the …

Recently, topological insulators (TIs) have regained extensive attention in spintronics due to
their potential applications in new‐generation spintronic devices, following the discovery of …

The bulk carrier excitation influences the phonon dynamics, which can alter and modulate
the surface charge density of topological insulators such as bismuth selenide (Bi2Se3). This …

Unidirectional spin Hall magnetoresistance (USMR) has emerged as a promising candidate
for magnetoresistive random-access memory (MRAM) technology. However, the realization …

In the realm of optoelectronic applications, the incorporation of a metal interlayer between
layers of a topological material holds significant potential. The interlayer introduces benefits …

Abstract n-type TiCoSb half-Heusler (HH) alloys show lower thermoelectric performance
may be notably owing to the low valley degeneracy of the conduction band. Here, we show …

Half-Heusler (HH) alloys based on TiCoSb are becoming popular semiconducting materials
for mid-temperature thermoelectric (TE) applications, due to their superior Seebeck …