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Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage
B Liu, T Wei, J Hu, W Li, Y Ling, Q Liu… - Chinese …, 2021 - iopscience.iop.org
The era of information explosion is coming and information need to be continuously stored
and randomly accessed over long-term periods, which constitute an insurmountable …
and randomly accessed over long-term periods, which constitute an insurmountable …
One order of magnitude faster phase change at reduced power in Ti-Sb-Te
M Zhu, M ** is an effective strategy to improve the properties of phase-change
random access memory (PCRAM), while the underlying mechanism remains to be …
random access memory (PCRAM), while the underlying mechanism remains to be …
Growth and microstructure of GeTe-Sb2Te3 heterostructures prepared by pulsed laser deposition
Chalcogenide based heterostructures turned out to be a promising approach to further
improve outstanding properties of phase change memory materials. For future applications …
improve outstanding properties of phase change memory materials. For future applications …
First-principles study of liquid and amorphous
Based on ab initio molecular-dynamics simulations, we generated models of liquid and
amorphous Sb 2 Te 3 of interest for applications as phase change material in optical and …
amorphous Sb 2 Te 3 of interest for applications as phase change material in optical and …
Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications
Compared with pure Sb 2 Te 3, Ti 0.32 Sb 2 Te 3 (TST) phase change material has larger
resistance ratio, higher crystallization temperature and better thermal stability. The sharp …
resistance ratio, higher crystallization temperature and better thermal stability. The sharp …