Band parameters for nitrogen-containing semiconductors
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
[BOOK][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
We present a comprehensive theoretical and experimental analysis of 1.3-μm
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …
Effect of annealing on the In and N distribution in InGaAsN quantum wells
We analyze the influence of annealing on compositional fluctuations in InGaAsN quantum
wells by means of composition-sensitive high-resolution transmission electron microscopy …
wells by means of composition-sensitive high-resolution transmission electron microscopy …
Temperature dependence of interband transitions in wurtzite InP nanowires
Semiconductor nanowires (NWs) formed by non-nitride III–V compounds grow preferentially
with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same …
with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same …
Effects of hydrogen on the electronic properties of dilute GaAsN alloys
Nitrogen has profound effects on the electronic structure of GaAs, as only a few percent of N
can drastically lower the band gap. It is, however, not recognized that the same amount of N …
can drastically lower the band gap. It is, however, not recognized that the same amount of N …
Charge separation and temperature-induced carrier migration in GaInNAs multiple quantum wells
We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga
1-x In x N y As 1-y multiple quantum well structures in magnetic fields up to 50 T as a …
1-x In x N y As 1-y multiple quantum well structures in magnetic fields up to 50 T as a …
Compositional dependence of the exciton reduced mass in
We report the compositional dependence of the exciton reduced mass, μ exc, of GaAs 1− x
Bi x in a very large Bi concentration range (x= 0–10.6%). Photoluminescence under high …
Bi x in a very large Bi concentration range (x= 0–10.6%). Photoluminescence under high …
Temperature dependence of the band gap of ZnSe1− xOx
R Broesler, EE Haller, W Walukiewicz… - Applied Physics …, 2009 - pubs.aip.org
We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-
grown ZnSe 1− x O x films (x= 0–0.021) using photoluminescence spectroscopy from 15 to …
grown ZnSe 1− x O x films (x= 0–0.021) using photoluminescence spectroscopy from 15 to …
Hydrogen Incorporation in III‐N‐V Semiconductors: From Macroscopic to Nanometer Control of the Materials' Physical Properties
The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1‐
xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable …
xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable …