Memristive devices are among the most emerging electronic elements to realize artificial
synapses for neuromorphic computing (NC) applications and have potential to replace the …

The CH3 NH3 PbI3-x Clx organic-inorganic hybrid perovskite material demonstrates
remarkable resistive switching behavior, which can be applicable in resistive random access …

In this study, a NiO-based resistive memristor was manufactured using a solution
combustion method. In this device, both analog and digital bipolar resistive switching were …

Organolead halide perovskite materials open up a new era for develo** low-cost and high
efficiency solar cells due to their simple and inexpensive fabrication process, superior light …

In this work, we present a simple and facile one step synthesis strategy to prepare CH 3 NH
3 PbBr 3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive …

Single synaptic device with inherent learning and memory functions is demonstrated based
on a forming-free amorphous Y 2 O 3 (yttria) memristor fabricated by dual ion beam …

Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its
application in solar cells and photodetectors is seriously hindered due to hysteresis …

Metal oxide-Polyaniline (PANI) nanocomposites have shown improved gas sensing
characteristics that can be attributed to the formation of ap–n junction between the n-type …

Resistive switching behaviors of amorphous MoO x thin films prepared by magnetron
sputtering at room temperature have been investigated. Ag/MoO x/ITO device shows a …

A solution-processed organometallic halide perovskite-based bulk heterojunction (BHJ)
memory device with a configuration of indium-doped tin oxide (ITO)/CH3NH3PbI3: PVK/Al …