Due to the unique characteristics of terahertz (THz) waves, such as low-energy, penetrating,
and broadband, THz imaging has been regarded as cutting-edge technology in many fields …

GaN provides the highest electron saturation velocity, breakdown voltage, operation
temperature, and thus the highest combined frequency-power performance among …

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of
the channel dimensions and can reach the THz range for sub-micron gate lengths …

Ever increasing demands of data traffic makes the transition to 6G communications in the
300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated …

We study the broadband photovoltaic response of field effect transistors on terahertz
radiation. A simple physical analytical model of the response is developed. It is based on …

Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based
high electron mobility transistors. The emission peak is found to be tunable by the gate …

Strong plasmon resonances have been observed in the terahertz transmission spectra (1–5
THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor …

Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have
significantly enhanced the functionality of electronic and optoelectronic devices, particularly …

The performance of an on-chip Terahertz (THz) source based on the Dyakonov-Shur (DS)
instability is analytically and numerically investigated. The impact of nonideal termination …