A short review on: optimization techniques of ZnO based thin film transistors

S Vyas - Chinese journal of physics, 2018 - Elsevier
There has been a significant global interest in the thin film transistor (TFT) due to its potential
use in flat panel display. A great deal of interest in zinc oxide (ZnO) based TFT has been …

Low-temperature and solution-processable zinc oxide transistors for transparent electronics

L Jiang, J Li, K Huang, S Li, Q Wang, Z Sun, T Mei… - ACS …, 2017 - ACS Publications
Zinc oxide (ZnO) thin-film transistors (TFTs) have many promising applications in the areas
of logic circuits, displays, ultraviolet detectors, and biosensors due to their high …

Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power

Y Li, Q **n, L Du, Y Qu, H Li, X Kong, Q Wang… - Scientific Reports, 2016 - nature.com
An extremely sensitive dependence of the electronic properties of SnOx film on sputtering
deposition power is discovered experimentally. The carrier transport sharply switches from n …

[HTML][HTML] Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors

S Muthusamy, S Bharatan, S Sivaprakasam… - Materials, 2024 - mdpi.com
ZnO thin films were deposited using RF sputtering by varying the argon: oxygen gas flow
rates and substrate temperatures. Structural, optical and electrical characterization of ZnO …

Effect of gate dielectric on the performance of ZnO based thin film transistor

S Vyas, ADD Dwivedi, RD Dwivedi - Superlattices and Microstructures, 2018 - Elsevier
The paper report the fabrication and characterization of two different sets of bottom gate top
contact ZnO thin film transistors (TFTs) using SiO 2 and Al 2 O 3 dielectric layers in an …

The influence of ZnO layer thickness on the performance and electrical bias stress instability in ZnO thin film transistors

DK Ngwashi, TA Mih, RBM Cross - Materials Research Express, 2020 - iopscience.iop.org
Abstract Thin Film Transistors (TFTs) are the active elements for future large area electronic
applications, in which low cost, low temperature processes and optical transparency are …

Investigation of Structural, Optical, and Electrical Properties of Ito Films Deposited at Different Plasma Powers: Enhanced Performance and Efficiency in SHJ Solar …

E Kartal, İ Duran, E Damgacı… - Eurasian Journal of …, 2023 - dergipark.org.tr
This article presents an investigation into the structural, optical, and electrical properties of
Indium Tin Oxide (ITO) films that were deposited utilizing various plasma powers. The …

Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study

A Ülkü, E Uçar, RB Serin, R Kaçar, M Artuç, E Menşur… - Micromachines, 2024 - mdpi.com
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide
semiconductor field effect transistors (MOSFETs) would be the 3D version that makes the …

DC sputtered ZrO2/Zn(1−x)Sn(x)O thin-film transistors and their property evaluation

P Bhat, P Salunkhe, D Kekuda - Applied Physics A, 2023 - Springer
A bottom gate staggered 30 nm Zn (1− x) Sn (x) O (x= 0.14)(TZO)-based thin-film transistors
(TFTs) were fabricated using DC magnetron reactive sputtering method. Highly transparent …

New CVD-based method for the growth of high-quality crystalline zinc oxide layers

F Huber, M Madel, A Reiser, S Bauer, K Thonke - Journal of Crystal Growth, 2016 - Elsevier
High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition
(CVD)-based low-cost growth method. The process is characterized by total simplicity, high …