Integration of chalcogenide phase-change materials (PCMs) with planar multilayer
structures, metasurfaces, waveguides and photonic integrated circuits has sparked …

This study comprehensively investigates the structural, microstructural, vibrational, magnetic,
and magnetocaloric properties of novelty Sn 0.6 Mn 0.1 Ge 0.3 Te alloys synthesized using …

Ge 1-x Mn x Te is shown to be a multiferroic semiconductor, exhibiting both ferromagnetic
and ferroelectric properties. By ferromagnetic resonance we demonstrate that both types of …

Phase-change materials (PCMs) have been widely investigated in terms of their application
in non-volatile memory technology. However, flexible PCM films have been inadequately …

Chalcogenide phase-change materials (PCMs) are technologically important due to their
ability to undergo fast and reversible transitions between the amorphous and crystalline …

Phase-change materials are the alloys at the heart of an emerging class of next-generation,
non-volatile digital memory technologies. However, the widely studied Ge–Sb–Te system …

Control of magnetic properties in diluted magnetic semiconductors (DMSs) using external
stimuli is a prerequisite for many spintronic applications. Fe-doped chalcogenide …

The underlying mechanism driving the structural amorphous-to-crystalline transition in
Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We …

This work presents results for the magnetic properties of the compound GeTe doped with 3d
transition metals V, Cr, and Mn from the viewpoint of potential application in spintronics. We …

Ab initio simulation of the transition from the crystalline to the amorphous phase of a phase-
change material doped with Fe impurities. The structural and magnetic properties of both …