Since research on artificial intelligence has begun receiving much attention, interest in
efficient hardware that can process a complex and large amount of information has also …

Today the influence of non-volatile solid-state memories on persons' lives has become more
prominent because of their non-volatility, low data latency, and high robustness. As a …

Lead-free halide perovskites are emerging as promising candidate for practical application
of optoelectronic devices due to their nontoxicity. Unfortunately, previously-reported lead …

The integration limit of flash memories is approaching, and many new types of memory to
replace conventional flash memories have been proposed. Unlike flash memories, new …

Threshold switching (TS) devices based on NbO x materials show intriguing potential for
constructing artificial neurons in a neuromorphic machine. However, the high electroforming …

Investigation has been done of bipolar resistive switching mechanism of Pt/Nb 2 O 5/Pt and
Bare conductive paint (BCP)/Nb 2 O 5/Pt memristive devices with orthorhombic phase …

Memristors have received tremendous attention recently for neuromorphic computing and
high-density data storage due to their potential for miniaturization; however, the …

Abstract Epitaxial NbO 2 (1 1 0) films, 20 nm thick, were grown by pulsed laser deposition on
Al 2 O 3 (0 0 0 1) substrates. The Ar/O 2 total pressure during growth was varied to …

This work aims to improve the corrosion properties of the 2198-T851 aluminium alloy by
coating with a set of niobium oxide thin films, using the reactive sputtering technique. The …

Resistive switching devices with a Nb2O5/NbO x bilayer stack combine threshold and
memory switching. Here we present a new fabrication method to form such devices …