Single-crystalline Sb 2 S 3 microtubes for high-performance broadband visible photodetection

S Fu, X Liu, H Dou, R Ali, A Zeng, J Man… - Journal of Materials …, 2024 - pubs.rsc.org
Antimony sulfide (Sb2S3) holds great promise for optoelectronic and photovoltaic
applications, attributed to its optimal bandgap (1.5–2.2 eV) and unique physicochemical …

Enhanced Response of Si-Based PbSe Thin Film MSM Photodetectors by Photon-Trap** Hole Array in the Surface

H Dou, L Liu, J Gou, C Li, X Yang, J Chen, J Han… - ACS …, 2024 - ACS Publications
A Si-based PbSe thin film metal–semiconductor–metal (MSM) photodetector with enhanced
efficiency in a wide spectral range is demonstrated with an integrated photon-trap** hole …

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu2SnS3 Thin Film toward High Efficiency

BK Mondal, AT Abir, J Hossain - Energy Technology, 2024 - Wiley Online Library
An ultrathin 15 μm wafer‐based c‐Si solar cell is designed and simulated, wherein the
current remedy is done by Cu2SnS3 (CTS) thin film. The ZnSe and AlSb are incorporated as …

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device

S Sharma, K Kumar, K Kaushlendra… - ACS Applied Electronic …, 2024 - ACS Publications
Designing multifunctional and unconventional devices can be accomplished by synergistic
integration of several external features on a memory device. In the current study, a hybrid …

Spontaneous formation of monocrystalline nanostripes in the molecular beam epitaxy of antimony triselenide

P Wojnar, S Chusnutdinow, A Kaleta, M Aleszkiewicz… - Nanoscale, 2024 - pubs.rsc.org
Self-assembled, highly anisotropic nanostructures are spontaneously formed in the
molecular beam epitaxy of antimony triselenide on GaAs substrates. These one-dimensional …

Exploring the Conductive Dynamics of Sb2(S,Se)3-Based Memristors for Non-Volatile Memory and Neuromorphic Applications

Y Yang, Y Yang, L Zheng, Y Wang… - The Journal of …, 2024 - ACS Publications
Advancing the development of novel materials or architectures for random access
memories, coupled with an in-depth understanding of their intrinsic conduction mechanisms …

Recent advancements and progress in development in chalcogenide (S, Se)-based thin films for high-performance photodetectors: a review

HTA Alanazi, GA Alzaidy - Physica Scripta, 2024 - iopscience.iop.org
Scientific and technical communities often debate photodetection as a significant technology
due to its unquestionable and extensive usage in business and research. Traditional bulk …

Novel memristor with Au/SnSe/ITO structure: First fabrication via a hydrothermal and sputtering approach

W Zhang, M Gao, X Lei, C Zhai, Z Zhang - Journal of Alloys and …, 2024 - Elsevier
The memristor holds significant promise as a key electronic element in neuromorphic
computing, enabling synaptic functionalities. Consequently, synthesizing memristors with …

[HTML][HTML] Compact non-volatile multilevel Sb2Se3 electro-optical switching in the mid-infrared group-IV-photonics platform

R Soref, F De Leonardis, M De Carlo… - Optics & Laser …, 2024 - Elsevier
This theoretical modeling and simulation paper presents designs and projected
performances of two non-volatile, broadband, on-chip 2× 2 electro-optical switches based …

P (VDF-TrFE) interlayer enables high performance of Sb2Se3 photodetectors

Y Lu, Z Chen, C Wu, X Yu, X Yu, Y Cao, Z Li, Q Qiao… - Materials Letters, 2024 - Elsevier
Abstract Antimony selenide (Sb 2 Se 3) has been extensively studied in photodetectors
(PDs) for its extraordinary photoelectric properties. In this study, we report a new attempt to …