It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are
today essential elements in many applications of power electronics. In this context, the study …

A simple protein-mediated approach for preparing freestanding (silica free) microscale
titania structures with morphologies inherited from complex-shaped, three-dimensional (3-D) …

The current–voltage (I–V) characteristics of Au/n-GaAs contacts prepared with
photolithography technique have been measured in the temperature range of 80–320K. The …

Abstract Al/Alq3 (organic materials)/p-Si device was fabricated by the use of spin coating
technique, and it was investigated by using current-voltage measurement in a wide …

Abstract Reactivity between SiC and Ir as a function of SiC-crystallinity was investigated by
diffusion bonding technique under a vacuum and over the temperature range of 1200 …

Understanding the physics and technology of Schottky contacts to Silicon Carbide is
important, for both academic and industrial researchers. In fact, the rectifying contact is a tool …

Epitaxial n-type ZnO film has been grown, on a commercial 5 μm thick p-type 4H-SiC (00.1)
Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 …

Cu 2 NiSnS 4 nanorods were synthesized by the usage of hot-injection technique and used
as interlayer between the p-Si and Al metal in order to examine their behavior against the …