Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT: MEH-PPV/Al organic devices: Comparison study
The electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT: MEH-
PPV/Al organic devices have been investigated by current–voltage and capacitance …
PPV/Al organic devices have been investigated by current–voltage and capacitance …
Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si (1 0 0) Schottky contacts
The current–voltage (I–V) characteristics of Sn/hydrogen-terminated p-type Si Schottky
contacts have been measured in the temperature range of 150–400K. It is shown that the …
contacts have been measured in the temperature range of 150–400K. It is shown that the …
The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer
The current–voltage (I–V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with
native insulator layer were measured in the temperature range of 150–375K. The estimated …
native insulator layer were measured in the temperature range of 150–375K. The estimated …
Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs
The current–voltage (I–V) characteristics of CrNiCo alloy Schottky contacts on a molecular-
beam epitaxy n-GaAs substrate have been measured over the temperature range of 130 …
beam epitaxy n-GaAs substrate have been measured over the temperature range of 130 …
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
The electrical properties of Au/Ti/HfO 2/n-GaAs metal/insulating layer/semiconductor (MIS)
contact structures were analyzed in detail by the help of capacitance–voltage (C–V) and …
contact structures were analyzed in detail by the help of capacitance–voltage (C–V) and …
NIR photodetector based on p-silicon nanowires/n-cadmium sulfide nanoscale junctions
Heterojunction of p-type silicon nanowire and n-type cadmium sulfide (CdS) nanoparticles
have been fabricated by deposition of CdS nanoparticles on chemically etched vertically …
have been fabricated by deposition of CdS nanoparticles on chemically etched vertically …
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
In this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a
reference sample for comparison with other devices in the literature, especially some …
reference sample for comparison with other devices in the literature, especially some …
Analysis of the current transport characteristics (CTCs) in the Au/n-Si Schottky diodes (SDs) with Al2O3 interfacial layer over wide temperature range
Temperature dependent electrical-parameters and CTCs in Au/Al 2 O 3/n-Si SDs have been
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
A new route for the synthesis of graphene oxide–Fe3O4 (GO–Fe3O4) nanocomposites and their Schottky diode applications
Addressed herein is a facile method for the preparation of magnetic graphene oxide–Fe 3 O
4 (GO–Fe 3 O 4) nanocomposites and the rectifying properties of (GO–Fe 3 O 4)/p-Si …
4 (GO–Fe 3 O 4) nanocomposites and the rectifying properties of (GO–Fe 3 O 4)/p-Si …
Photosensitive Schottky barrier diodes based on Cu/p-SnSe thin films fabricated by thermal evaporation
Tin selenide (SnSe), a group IV–VI compound semiconductor material, is used to fabricate
various solid-state devices such as memory switching devices, P–N junction diodes …
various solid-state devices such as memory switching devices, P–N junction diodes …