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[HTML][HTML] A multi-electrode two-dimensional position sensitive diamond detector
S Ditalia Tchernij, D Siciliano, G Provatas… - Applied physics …, 2024 - pubs.aip.org
In multi-electrode devices, charge pulses at all the electrodes are induced concurrently by
the motion of the excess charge carriers generated by a single ion. This charge-sharing …
the motion of the excess charge carriers generated by a single ion. This charge-sharing …
Research facilities and highlights at the Centro Nacional de Aceleradores (CNA)
J Gómez-Camacho, JG López, C Guerrero… - … Physical Journal Plus, 2021 - epjplus.epj.org
Abstract The Centro Nacional de Aceleradores is a user-oriented accelerator facility in
Seville, Spain. Its main facilities are a 3 MV tandem accelerator, an 18 MeV proton …
Seville, Spain. Its main facilities are a 3 MV tandem accelerator, an 18 MeV proton …
SAFIIRA: A heavy-ion multi-purpose irradiation facility in Brazil
VAP Aguiar, NH Medina, N Added… - Review of Scientific …, 2020 - pubs.aip.org
This work describes the new facility for applied nuclear physics at the University of Sao
Paulo, mainly for irradiation of electronic devices. It is a setup composed of a quadrupole …
Paulo, mainly for irradiation of electronic devices. It is a setup composed of a quadrupole …
Charge collection uniformity and irradiation effects of synthetic diamond detectors studied with a proton micro-beam
C Cazzaniga, M Rebai, JG Lopez… - Nuclear Instruments and …, 2017 - Elsevier
The proton micro-beam of the CNA accelerator in Seville has been used to test two detectors
based on single crystal diamond grown by chemical vapor deposition. The first diamond has …
based on single crystal diamond grown by chemical vapor deposition. The first diamond has …
Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
JG Lopez, MC Jimenez-Ramos… - Nuclear Instruments and …, 2016 - Elsevier
The transport properties of a series of Si and SiC diodes have been studied using the Ion
Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples …
Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples …
Dynamics of Radiation Effects in Silicon Studied with Pulsed Ion Beams and Ion Beam Induced Charge Collection
JG Lopez, MCJ Ramos, AG Osuna, MR Ramos… - … of Accelerators in the … - taylorfrancis.com
The dynamics of structural defects created in semiconductor devices and detectors by ion
irradiation present a multi-scale problem with characteristic times ranging from pico-seconds …
irradiation present a multi-scale problem with characteristic times ranging from pico-seconds …
[PDF][PDF] Estudio de la resistencia a la radiación de diodos de silicio mediante aceleradores de partículas
AG Osuna - 2019 - core.ac.uk
Actualmente, el silicio es el material más comúnmente usado para fabricar detectores de
semiconductor y dispositivos electrónicos. Esto se debe principalmente a su alta …
semiconductor y dispositivos electrónicos. Esto se debe principalmente a su alta …