MeV implantation into semiconductors
JS Williams, RG Elliman, MC Ridgway… - Nuclear Instruments and …, 1993 - Elsevier
This paper reviews recent MeV implantation applications into semiconductors carried out at
the Australian National University. Studies of damage, amorphization and dynamic defect …
the Australian National University. Studies of damage, amorphization and dynamic defect …
Topics in solid phase epitaxy: Strain, structure and geometry
O Hellman - Materials Science and Engineering: R: Reports, 1996 - Elsevier
The effects of some experimental parameters on the solid-phase crystallization of
amorphous films on single crystals, a process known as Solid Phase Epitaxy (SPE), are …
amorphous films on single crystals, a process known as Solid Phase Epitaxy (SPE), are …
Damage accumulation during ion implantation of unstrained Si1−xGex alloy layers
The growth of damage induced by ion implantation in unstrained Si1− xGex epilayers is
examined as a function of epilayer composition and of implant temperature and dose rate …
examined as a function of epilayer composition and of implant temperature and dose rate …
Porosity as a function of stoichiometry and implantation temperature in Ge/Si1− xGex alloys
The development of porosity in single-crystal germanium and silicon-germanium alloys (c-Si
1− x Ge x) of (100) orientation was studied under bombardment with 140 keV Ge− ions over …
1− x Ge x) of (100) orientation was studied under bombardment with 140 keV Ge− ions over …
Damage and strain in epitaxial GexSi1−x films irradiated with Si
DYC Lie, A Vantomme, F Eisen, T Vreeland Jr… - Journal of applied …, 1993 - pubs.aip.org
The damage and strain induced by irradiation of both relaxed and pseudomorphic Ge x Si1−
x films on Si (100) with 100 keV 28Si ions at room temperature have been studied by MeV …
x films on Si (100) with 100 keV 28Si ions at room temperature have been studied by MeV …
Method for making a transistor in a stack of superimposed semiconductor layers
(57) ABSTRACT A method for making a transistor in which: a) on a substrate, at least one
semi-conductor structure is made, which is formed by a stack comprising alternat ing layer …
semi-conductor structure is made, which is formed by a stack comprising alternat ing layer …
Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused‐ion‐beam implantation
LB Allard, GC Aers, S Charbonneau… - Journal of applied …, 1992 - pubs.aip.org
Low‐temperature photoluminescence (PL) spectroscopy was used to estimate the
compositional disordering induced by Ga focused‐ion‐beam implantation in a series of …
compositional disordering induced by Ga focused‐ion‐beam implantation in a series of …
Channeling studies of implantation damage in SiGe superlattices and SiGe alloys
M Vos, C Wu, IV Mitchell, TE Jackman… - Nuclear Instruments and …, 1992 - Elsevier
Recent studies have shown a large difference in damage rate between the Si and the SiGe
layers of strained-layer superlattices. In order to understand this phenomenon, we have …
layers of strained-layer superlattices. In order to understand this phenomenon, we have …
Subsurface processing of electronic materials assisted by atomic displacements
JS Williams - Mrs Bulletin, 1992 - cambridge.org
In the early years of do** of semiconductors by ion implantation, atomic displacements
and residual lattice damage were considered undesirable byproducts of an otherwise …
and residual lattice damage were considered undesirable byproducts of an otherwise …
Generation and recovery of strain in 28Si‐implanted pseudomorphic GeSi films on Si(100)
G Bai, MA Nicolet - Journal of applied physics, 1992 - pubs.aip.org
Effects of ion implantation of 320 keV 28Si at room temperature in pseudomorphic
metastable Ge x Si1− x (x≊ 0.04, 0.09, 0.13) layers∼ 170 nm thick grown on Si (100) wafers …
metastable Ge x Si1− x (x≊ 0.04, 0.09, 0.13) layers∼ 170 nm thick grown on Si (100) wafers …