Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices

J Shi, J Zhang, L Yang, M Qu, DC Qi… - Advanced …, 2021 - Wiley Online Library
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors

W Nunn, TK Truttmann, B Jalan - Journal of materials research, 2021 - Springer
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …

Competing correlated states around the zero-field Wigner crystallization transition of electrons in two dimensions

J Falson, I Sodemann, B Skinner, D Tabrea… - Nature materials, 2022 - nature.com
The competition between kinetic energy and Coulomb interactions in electronic systems
leads to complex many-body ground states with competing orders. Here we present zinc …

[HTML][HTML] New approaches for achieving more perfect transition metal oxide thin films

JL MacManus-Driscoll, MP Wells, C Yun, JW Lee… - APL Materials, 2020 - pubs.aip.org
This perspective considers the enormous promise of epitaxial functional transition metal
oxide thin films for future applications in low power electronic and energy applications since …

Multilayer MgZnO/ZnO thin films for UV photodetectors

VS Rana, JK Rajput, TK Pathak, LP Purohit - Journal of Alloys and …, 2018 - Elsevier
Mg y Zn 1-y O/ZnO thin films have been deposited on soda lime glass substrates by using
sol–gel spin coating technique with varying Mg contents (y= 2, 4, 6, 8 at.%). X-ray diffraction …

Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots

K Noro, Y Kozuka, K Matsumura, T Kumasaka… - Nature …, 2024 - nature.com
Quantum devices such as spin qubits have been extensively investigated in electrostatically
confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si …

Strong-correlation induced high-mobility electrons in Dirac semimetal of perovskite oxide

J Fujioka, R Yamada, M Kawamura, S Sakai… - Nature …, 2019 - nature.com
Electrons in conventional metals become less mobile under the influence of electron
correlation. Contrary to this empirical knowledge, we report here that electrons with the …

A review of the quantum Hall effects in MgZnO/ZnO heterostructures

J Falson, M Kawasaki - Reports on Progress in Physics, 2018 - iopscience.iop.org
This review visits recent experimental efforts on high mobility two-dimensional electron
systems (2DES) hosted at the Mg x Zn $ _ {{\rm 1}-x} $ O/ZnO heterointerface. We begin with …

Oscillations in radiative dam** of plasma resonances in a gated disk of a two-dimensional electron gas

DA Rodionov, IV Zagorodnev - Physical Review B, 2022 - APS
We calculate the absorption spectra of a conductive disk in the presence of a metal gate. In
our analysis, we use the conductivity described by the Drude model. We examine the …

Electron mobility in oxide heterostructures

F Trier, DV Christensen, N Pryds - Journal of Physics D: Applied …, 2018 - iopscience.iop.org
Next-generation integrated circuit devices based on transition-metal-oxides are expected to
boast a variety of extraordinary properties, such as superconductivity, transparency in the …