Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …
properties of electrical conductivity and optical transparency. They are being widely used as …
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
Competing correlated states around the zero-field Wigner crystallization transition of electrons in two dimensions
The competition between kinetic energy and Coulomb interactions in electronic systems
leads to complex many-body ground states with competing orders. Here we present zinc …
leads to complex many-body ground states with competing orders. Here we present zinc …
[HTML][HTML] New approaches for achieving more perfect transition metal oxide thin films
This perspective considers the enormous promise of epitaxial functional transition metal
oxide thin films for future applications in low power electronic and energy applications since …
oxide thin films for future applications in low power electronic and energy applications since …
Multilayer MgZnO/ZnO thin films for UV photodetectors
Mg y Zn 1-y O/ZnO thin films have been deposited on soda lime glass substrates by using
sol–gel spin coating technique with varying Mg contents (y= 2, 4, 6, 8 at.%). X-ray diffraction …
sol–gel spin coating technique with varying Mg contents (y= 2, 4, 6, 8 at.%). X-ray diffraction …
Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots
K Noro, Y Kozuka, K Matsumura, T Kumasaka… - Nature …, 2024 - nature.com
Quantum devices such as spin qubits have been extensively investigated in electrostatically
confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si …
confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si …
Strong-correlation induced high-mobility electrons in Dirac semimetal of perovskite oxide
Electrons in conventional metals become less mobile under the influence of electron
correlation. Contrary to this empirical knowledge, we report here that electrons with the …
correlation. Contrary to this empirical knowledge, we report here that electrons with the …
A review of the quantum Hall effects in MgZnO/ZnO heterostructures
J Falson, M Kawasaki - Reports on Progress in Physics, 2018 - iopscience.iop.org
This review visits recent experimental efforts on high mobility two-dimensional electron
systems (2DES) hosted at the Mg x Zn $ _ {{\rm 1}-x} $ O/ZnO heterointerface. We begin with …
systems (2DES) hosted at the Mg x Zn $ _ {{\rm 1}-x} $ O/ZnO heterointerface. We begin with …
Oscillations in radiative dam** of plasma resonances in a gated disk of a two-dimensional electron gas
We calculate the absorption spectra of a conductive disk in the presence of a metal gate. In
our analysis, we use the conductivity described by the Drude model. We examine the …
our analysis, we use the conductivity described by the Drude model. We examine the …
Electron mobility in oxide heterostructures
Next-generation integrated circuit devices based on transition-metal-oxides are expected to
boast a variety of extraordinary properties, such as superconductivity, transparency in the …
boast a variety of extraordinary properties, such as superconductivity, transparency in the …