Abstract Chemical Vapor Deposited (CVD) graphene is an attractive candidate as
transparent conductive electrode (TCE) for solar cells. Here it is proposed as TCE for silicon …

We report on low-temperature and low-pressure deposition conditions of 140° C and 1.5
mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the …

In this work, we show that a bilayer SiN x passivation scheme which includes a high-
temperature annealed SiN x as gate dielectric, significantly improves both ON and OFF state …

This paper proposes an innovative technology for top contacting graphene-on-silicon
Schottky solar cells, making use of graphite glue instead of the commonly used Ti/Au bilayer …

This study investigates low-temperature plasma nitriding of hydrogenated silicon (SiN x: H)
film in radio frequency (RF) and RF–ultra-high frequency (UHF) hybrid plasmas. To study the …

Abstract Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from
a technological and application point of view. Thus, being able to synthesize them in situ …

Silicon nitride is a commonly used material for ceramic applications and in the fabrication
processes of integrated circuits (ICs). It has also increased in interest from the scientific …

Ammonia‐(NH3‐) free, hydrogenated amorphous silicon nitride (a‐SiNx: H) thin films have
been deposited using silane (SiH4) and nitrogen (N2) as source gases by plasma …

The effects of the annealing temperature on photoluminescence (PL) of non-stoichiometric
silicon nitride (SiNx) thin films deposited by plasma enhanced chemical vapor deposition …

Nitride-rich silicon-nitride (SiN x) is being explored for its potential as a suitable optical
material for use in microsystems operating in the near-UV spectral range. Although silicon …