Assessment of junction termination extension structures for ultrahigh-voltage silicon carbide pin-diodes; a simulation study

D Johannesson, M Nawaz… - IEEE Open Journal of …, 2021 - ieeexplore.ieee.org
The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices
consumes a considerable part of the semiconductor chip area. The JTE area is closely …

Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices

L Geng, R Yue, Y Wang - Microelectronics Journal, 2024 - Elsevier
A step-etched space-modulated junction termination extension (SE-SM-JTE) is proposed for
ultrahigh voltage (≥ 10 kV) 4H-SiC devices in this work. The proposed structure creates a …

Compact trench floating field rings termination for 10kV+ rated SiC n-IGBTs

N Lophitis, PM Gammon, AB Renz, TX Dai… - Materials Science …, 2022 - Trans Tech Publ
This work presents the design methodology and performance of a compact edge termination
structure aiming 10kV+ rated Silicon Carbide (SiC) devices. Standard Floating Field Rings …

Performance improvement of> 10kV SiC IGBTs with retrograde p-well

A Tiwari, M Antoniou, N Lophitis, S Perkins… - Materials Science …, 2019 - Trans Tech Publ
A p-well consisting of a retrograde do** profile is investigated for performance
improvement of> 10kV SiC IGBTs. The retrograde p-well, which can be realized using low …

[PDF][PDF] Silicon carbide (SiC) insulated gate bipolar transistors (IGBTs) for high voltage applications

I Almpanis - 2024 - researchgate.net
The significant interest that SiC has attracted over the last decades, coupled with the ease of
voltage control and low conduction losses of the IGBTs, have led to their development and …