Freestanding oxide membranes constitute an intriguing material platform for new
functionalities and allow integration of oxide electronics with technologically important …

In LaAlO 3/SrTi O 3 heterostructures, a still poorly understood phenomenon is that of
electron trap** in back-gating experiments. Here, by combining magnetotransport …

The interfacial structural coupling, electronic transfer, and particle coupling behaviors in
heterojunctions composed of transition metal oxides (TMOs) and transition metal …

In the family of functional oxide materials, the interface between LaAlO3 and SrTiO3
(LAO/STO) is an interesting example, as both materials are large‐bandgap insulators in their …

Nanoscale channels realized at the conducting interface between LaAlO 3 and SrTiO 3
provide a perfect playground to explore the effect of dimensionality on the electronic …

We investigate the g-factors of individual electron states in gate-defined quantum dots
fabricated from LaAlO 3/SrTiO 3 heterostructures. We consider both the case of effective …

The origin of the two-dimensional electron system (2DES) appearing at the (001) interface of
band insulators SrTiO 3 and LaAlO 3 has been rationalized in the framework of a polar …

Multiple experiments have observed a sharp transition in the band structure of LaAlO
3/SrTiO 3 (001) interfaces as a function of applied gate voltage. This Lifshitz transition …

Both LaAlO3 and BiAlO3 are isostructural, isoelectronic and band insulators. Therefore, in
analogy to the LaAlO3/SrTiO3 heterostructure, a quasi two dimensional electron gas (q …

Conductance and gating effects at sputtered oxide interfaces Page 1 Conductance and gating
effects at sputtered oxide interfaces in, C. Citation in, C. (2019, ul 3). . . Retrie ed from …