Memory cells
P Zheng, SW Russell, DR Economy - US Patent 11,349,068, 2022 - Google Patents
A memory cell can include a phase change material layer and a first electrode layer
adjacent to the phase change material layer and having a phase change material layer side …
adjacent to the phase change material layer and having a phase change material layer side …
Memory array containing capped aluminum access lines and method of making the same
T Futase - US Patent 11,424,292, 2022 - Google Patents
A cross-point memory device includes first conductive line structures laterally extending
along a first horizontal direction, an array of memory pillar structures overlying top surfaces …
along a first horizontal direction, an array of memory pillar structures overlying top surfaces …
Method to effectively suppress heat dissipation in PCRAM devices
YC Lin, JM Chen, SM Yu, TY Lee, YS Chen - US Patent 11,588,106, 2023 - Google Patents
2020-10-27 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
Phase change memory cell with ovonic threshold switch
(57) ABSTRACT A structure including a bottom electrode, a phase change material layer
vertically aligned and an ovonic threshold switching layer vertically aligned above the phase …
vertically aligned and an ovonic threshold switching layer vertically aligned above the phase …
Phase change memory cell with ovonic threshold switch
A structure including a bottom electrode, a phase change material layer vertically aligned
and an ovonic threshold switching layer vertically aligned above the phase change material …
and an ovonic threshold switching layer vertically aligned above the phase change material …
Semiconductor structure and manufacturing method thereof
X Wang, D Zeng, H Li, D Jiefang, K Cao - US Patent 11,948,616, 2024 - Google Patents
The present disclosure relates to a semiconductor structure and a manufacturing method
thereof. The semiconductor structure includes: a substrate; a transistor, including a control …
thereof. The semiconductor structure includes: a substrate; a transistor, including a control …
Semiconductor structure and manufacturing method thereof
X Wang, D Zeng, H Li, D Jiefang - US Patent 12,046,280, 2024 - Google Patents
The present disclosure relates to a semiconductor structure and a manufacturing method
thereof. The semiconductor structure includes a transistor; a first phase change memory …
thereof. The semiconductor structure includes a transistor; a first phase change memory …
Phase-change memory device and method
TY Lee, YC Lin, SM Yu - US Patent 11,925,127, 2024 - Google Patents
A method includes forming a dielectric layer over a substrate, the dielectric layer having a
top surface; etching an opening in the dielectric layer; forming a bottom electrode within the …
top surface; etching an opening in the dielectric layer; forming a bottom electrode within the …
Phase-change memory device and method
TY Lee, YC Lin, SM Yu - US Patent 11,411,180, 2022 - Google Patents
A method includes forming a dielectric layer over a substrate, the dielectric layer having a
top surface; etching an opening in the dielectric layer; forming a bottom electrode within the …
top surface; etching an opening in the dielectric layer; forming a bottom electrode within the …
Neural network memory with an array of variable resistance memory cells
I Tortorelli - US Patent 11,587,612, 2023 - Google Patents
US11587612B2 - Neural network memory with an array of variable resistance memory cells -
Google Patents US11587612B2 - Neural network memory with an array of variable resistance …
Google Patents US11587612B2 - Neural network memory with an array of variable resistance …