Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …

Abstract 2D materials are a family of layered materials exhibiting rich exotic phenomena,
such as valley‐contrasting physics. Down to single‐particle level, unraveling fundamental …

Spins confined to atomically thin semiconductors are being actively explored as quantum
information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal …

Among quantum devices based on 2D materials, gate-defined quantum confined 1D
channels are much less explored, especially in the high-mobility regime where many-body …

Quantum confinement and manipulation of charge carriers are critical for achieving devices
practical for quantum technologies. The interplay between electron spin and valley, as well …

We develop here a theory of the electronic properties of a finite number of valence holes in
gated WSe 2 quantum dots, considering the influence of spin, valley, electronic orbitals, and …

We present a theory of interacting valence holes in a gate-defined one-dimensional
quantum channel in a single layer of a transition metal dichalcogenide material WSe 2 …

We develop a microscopic and atomistic theory of electron-spin-based qubits in gated
quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified …

We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-
defined double quantum dot created within a Mo S 2 monolayer flake. We show how to …

Energy-efficient compact alternatives to fully digital computing strategies could be achieved
by implementations of artificial neural networks (ANNs) that borrow analog techniques. In …