Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurements
Abstract In this work, Al/Al 2 O 3/Ge/p-Si heterostructures were fabricated by e-beam thermal
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …
A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS: GO (1: 1) and (ZnCdS: GO (1: 0.5) doped PVP interlayer using current–voltage (I …
In this study, both the Au/(ZnCdS: GO (1: 1) doped PVP)/n-Si and Au/(ZnCdS: GO (1: 0.5)
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact
The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes
are a significant issue with more advantageous than the on-chip sensor. The sensitivity () …
are a significant issue with more advantageous than the on-chip sensor. The sensitivity () …
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
In this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a
reference sample for comparison with other devices in the literature, especially some …
reference sample for comparison with other devices in the literature, especially some …
Electron trap** effects in SiC Schottky diodes: Review and comment
JR Nicholls - Microelectronics Reliability, 2021 - Elsevier
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes
In this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by
spin-coating method. The photoresponse and electrical properties of the Al/symmetrical …
spin-coating method. The photoresponse and electrical properties of the Al/symmetrical …
Enhancement of physical properties of nebulizer spray-pyrolyzed PbS thin films for Optoelectronic device application: an effect of Ag do**
Here, using a jet nebulizer spray pyrolysis (JNSP) approach, we have created a highly
sensitive P–N junction diode using nanostructured Ag-PbS films as the junction layer. Ag …
sensitive P–N junction diode using nanostructured Ag-PbS films as the junction layer. Ag …
Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing
Abstract Ni/n-GaP/Al Schottky diodes have been fabricated and thermally annealed at 400°
C to obtain Schottky rectifying contacts with optimum performance and improve …
C to obtain Schottky rectifying contacts with optimum performance and improve …
The effect of Cu-do** to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices
EE Baydilli - Materials Science in Semiconductor Processing, 2024 - Elsevier
The objective of this study is to determine the temperature and voltage-dependent current
conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to …
conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to …
The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on …
The current conduction mechanisms (CCMs), temperature-sensitivities (S), energy-
dependent interface traps (N ss), and origin of the intersection points in the forward bias (IF …
dependent interface traps (N ss), and origin of the intersection points in the forward bias (IF …