GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations
JM Ulloa, R Gargallo-Caballero, M Bozkurt… - Physical Review B …, 2010 - APS
The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum
dots (QDs) are shown to be strongly correlated with structural changes. The observed …
dots (QDs) are shown to be strongly correlated with structural changes. The observed …
Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy
We report a detailed analysis of the shape, size, and composition of self-assembled InAs
quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) …
quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) …
Evaluation of different cap** strategies in the InAs/GaAs QD system: Composition, size and QD density features
In this work, two different strategies to preserve InAs/GaAs QDs against decomposition
during the cap** process have been compared structurally and optically. They are based …
during the cap** process have been compared structurally and optically. They are based …
Effect of cap thickness on InAs/InP quantum dots grown by droplet epitaxy in metal–organic vapor phase epitaxy
InAs quantum dots (QDs) are grown on bare InP (001) via droplet epitaxy (DE) in metal–
organic vapor phase epitaxy (MOVPE). Cap** layer engineering, used to control QD size …
organic vapor phase epitaxy (MOVPE). Cap** layer engineering, used to control QD size …
Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer
We report a combined experimental and theoretical analysis of Sb and In segregation during
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …
Analysis of the modified optical properties and band structure of GaAs1− xSbx-capped InAs/GaAs quantum dots
The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a
thin GaAs 1− x Sb x layer is analyzed in terms of the band structure. To do so, the size …
thin GaAs 1− x Sb x layer is analyzed in terms of the band structure. To do so, the size …
General route for the decomposition of InAs quantum dots during the cap** process
The effect of the cap** process on the morphology of InAs/GaAs quantum dots (QDs) by
using different GaAs-based cap** layers (CLs), ranging from strain reduction layers to …
using different GaAs-based cap** layers (CLs), ranging from strain reduction layers to …
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs cap** process
A procedure to quantitatively analyse the relationship between the wetting layer (WL) and
the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the …
the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the …
InAs quantum dot morphology after cap** with In, N, Sb alloyed thin films
Using a thin cap** layer to engineer the structural and optical properties of InAs/GaAs
quantum dots (QDs) has become common practice in the last decade. Traditionally, the main …
quantum dots (QDs) has become common practice in the last decade. Traditionally, the main …
Metamorphic buffer layer platform for 1550 nm single-photon sources grown by mbe on (100) gaas substrate
We demonstrate single-photon emission with a low probability of multiphoton events of 5%
in the C-band of telecommunication spectral range of standard silica fibers from molecular …
in the C-band of telecommunication spectral range of standard silica fibers from molecular …