Resonant tunneling diodes high-speed terahertz wireless communications-a review

D Cimbri, J Wang, A Al-Khalidi… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Resonant tunneling diode (RTD) technology is emerging as one of the promising
semiconductor-based solid-state technologies for terahertz (THz) wireless communications …

Large on-off ratios and negative differential resistance in a molecular electronic device

J Chen, MA Reed, AM Rawlett, JM Tour - science, 1999 - science.org
A molecule containing a nitroamine redox center (2′-amino-4-ethynylphenyl-4′-
ethynylphenyl-5′-nitro-1-benzenethiol) was used in the active self-assembled monolayer in …

Silicon‐Germanium strained layer materials in microelectronics

DJ Paul - Advanced Materials, 1999 - Wiley Online Library
Review: The use of Si1–xGex in microelectronics production is appealing not only because
it is compatible with existing industrial technology used for the production of silicon‐based …

Intrinsic single-layer multiferroics in transition-metal-decorated chromium trihalides

M Liu, S He, H Ji, J Guo, Z Jiang, JT Sun… - npj Computational …, 2024 - nature.com
Two-dimensional materials possessing intrinsic multiferroic properties have long been
sought to harness the magnetoelectric coupling in nanoelectronic devices. Here, we report …

[BOOK][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

[PDF][PDF] Roadmap for nanoelectronics

R Compano, L Molenkamp, DJ Paul - European Commission IST …, 2000 - researchgate.net
A “Roadmap” is an extended look at the future of a chosen field of inquiry composed from
the collective knowledge of researchers in that field. The composition of a roadmap can …

Interface state-induced negative differential resistance observed in hybrid perovskite resistive switching memory

H Ma, W Wang, H Xu, Z Wang, Y Tao… - … applied materials & …, 2018 - ACS Publications
Hybrid organic–inorganic perovskite, well-known as light-absorbing materials in solar cells,
have recently attracted considerable interest for applications in resistive switching (RS) …

Programmable Negative Differential Resistance Effects Based on Self‐Assembled Au@ PPy Core–Shell Nanoparticle Arrays

J Zheng, J Zhang, Z Wang, L Zhong, Y Sun… - Advanced …, 2018 - Wiley Online Library
The negative differential resistance (NDR) effect observed in conducting polymer/Au
nanoparticle composite devices is not yet fully clarified due to the random and disordered …

Tunneling-based SRAM

JPA van der Wagt - Proceedings of the IEEE, 1999 - ieeexplore.ieee.org
This paper describes a new high-density low-power circuit approach for implementing static
random access memory (SRAM) using low current density resonant tunneling diodes …

Negative differential conductance effect and electrical anisotropy of 2D ZrB2 monolayers

Y An, J Jiao, Y Hou, H Wang, R Wu, C Liu… - Journal of Physics …, 2018 - iopscience.iop.org
Abstract Two-dimensional (2D) metal-diboride ZrB 2 monolayers was predicted theoretically
as a stable new electronic material (Lopez-Bezanilla 2018 Phys. Rev. Mater. 2 011002) …