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Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
Thin metal films (Au, Ir, Cr, and Sc), deposited by an electron beam on bulk, exfoliated WS2
and WTe2 using two different reactor base pressures (high vacuum (HV)< 2× 10–6 mbar; …
and WTe2 using two different reactor base pressures (high vacuum (HV)< 2× 10–6 mbar; …
Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
Nanometer-scale films of contact metals (Au, Ir, Cr, and Sc), deposited on bulk, exfoliated
MoSe2 and MoTe2 by electron beam evaporation under high vacuum (HV,< 2× 10–6 mbar) …
MoSe2 and MoTe2 by electron beam evaporation under high vacuum (HV,< 2× 10–6 mbar) …
EFFECTS OF DEPOSITION CONDITIONS ON THE INTERFACE CHEMISTRY BETWEEN CONTACT METALS AND TUNGSTEN CHALCOGENIDES
CM Smyth, R Addou, S McDonnell… - … INTERFACE IN 1D …, 2018 - search.proquest.com
Contact metals (Au, Ir, Cr, and Sc) are deposited on bulk WS2, WSe2, and WTe2 under UHV
(< 2× 10-9 mbar) and HV (< 5× 10-6 mbar) conditions and subsequently characterized with …
(< 2× 10-9 mbar) and HV (< 5× 10-6 mbar) conditions and subsequently characterized with …