Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …

Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …

Ferroelectrics have become indispensable components in various application fields,
including information processing, energy harvesting, and electromechanical conversion …

Dielectric electrostatic capacitors, because of their ultrafast charge–discharge, are desirable
for high-power energy storage applications. Along with ultrafast operation, on-chip …

Abstract Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile
memory and logic technologies in which domain walls, rather than domains, serve as an …

Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …