Micro-LED undoubtedly stands out as a highly anticipated technology when it comes to the
innovation of future display technologies. Micro-LED technology surpasses traditional …

III‐V semiconductors, known for their optoelectronic properties and versatile engineering
capabilities, play a crucial role in the fabrication of Micro light‐emitting diodes (Micro‐LEDs) …

Due to their promising optical performance, micro-light emitting diodes (micro-LEDs) based
on colour conversion layer (CCL) have garnered significant attention as the next-generation …

Nanostructured ultraviolet (UV) light sources represent a growing research field in view of
their potential applications in wearable optoelectronics or medical treatment devices. In this …

MicroLEDs, particularly when integrated with CMOS microelectronics, represent a significant
advancement in nitride technology. While large-area, high-power LEDs for solid-state …

Near-eye displays are widely recognized as a groundbreaking technological advancement
with the potential to significantly impact daily life. Within the realm of near-eye displays …

InGaN-based micro-light-emitting diodes (micro-LEDs) are crucial for efficient full-color micro-
displays, but suffer from severe degradation of external quantum efficiency (EQE) with size …

III-nitride-based micro-light-emitting diodes (micro-LEDs) are currently under rapid
development for next-generation high-resolution and high-brightness displays and …

One-dimensional (1D) vertical nitrides are highly attractive for light-emitting diode (LED)
applications because they are useful for overcoming the drawbacks of conventional GaN …

Terbium (Tb)‐doped Ga2O3 films are grown on Si substrates by pulsed laser deposition at a
substrate temperature of 500° C. The electroluminescence (EL) peaks detected at 488, 543 …