Semiconductor materials and devices for gas sensors
Gas sensors are frequently used for detecting toxic gases and vapors for environmental
control, industrial monitoring and household safety. Semiconductor conductivity can be …
control, industrial monitoring and household safety. Semiconductor conductivity can be …
Metal oxide semiconductor-based Schottky diodes: a review of recent advances
NA Al-Ahmadi - Materials Research Express, 2020 - iopscience.iop.org
Abstract Metal-oxide-semiconductor (MOS) structures are essential for a wide range of
semiconductor devices. This study reviews the development of MOS Schottky diode, which …
semiconductor devices. This study reviews the development of MOS Schottky diode, which …
Electrically Insulated Catalyst–Ionomer Anode Interfaces toward Durable Alkaline Membrane Electrolyzers
Anion-exchange-membrane water electrolysis (AEMWE) is an emerging technology for
scalable hydrogen production. AEMWE has poor durability when operating without …
scalable hydrogen production. AEMWE has poor durability when operating without …
A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure
XD Meng, YC Han, L Ren, LX Zhang, C Peng… - Nuclear Instruments and …, 2024 - Elsevier
Energy resolution and leakage current are two key parameters for semiconductor neutron
detectors. Metal-Oxide-Semiconductor (MOS) detectors introduce an additional oxide layer …
detectors. Metal-Oxide-Semiconductor (MOS) detectors introduce an additional oxide layer …
Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties
As per this work, it is aimed to explore and analyze some dielectric characteristics—such as
dielectric constant (ε^ ′ ε′), dielectric loss (ε^ ′ ′ ε ″), loss tangent (tan δ tan δ), AC …
dielectric constant (ε^ ′ ε′), dielectric loss (ε^ ′ ′ ε ″), loss tangent (tan δ tan δ), AC …
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer
D Shi, Y Wang, X Wu, Z Yang, X Li, J Yang, F Cao - Solid-State Electronics, 2021 - Elsevier
In this paper, an Al/Ti Schottky-electrode was fabricated on a 4H-SiC surface via sputtering,
and an Al 2 O 3 layer was inserted into the metal semiconductor contact-surface using …
and an Al 2 O 3 layer was inserted into the metal semiconductor contact-surface using …
Performance improvement of n-TiO2/p-Si heterojunction by forming of n-TiO2/polyphenylene/p-Si anisotype sandwich heterojunction
Abstract The n-TiO 2/polyphenylene (PPh)/p-Si heterojunction devices were fabricated in
which PPh film and TiO 2 top layer were grown on p-Si substrates by diazonium modification …
which PPh film and TiO 2 top layer were grown on p-Si substrates by diazonium modification …
A study about Schottky barrier height and ideality factor in thin film transistors with metal/zinc oxide nanoparticles structures aiming flexible electronics application
Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in
Thin Film Transistors (TFT) were the focus of this study. The regions between the source …
Thin Film Transistors (TFT) were the focus of this study. The regions between the source …
Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts
In this work, we performed systematic electrical characterization and analysis of indium–
gallium–zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with different Cu …
gallium–zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with different Cu …
[HTML][HTML] Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC: H interface layer
The possibility of Schottky barrier height (SBH) modulation of conventional Ti/4H-SiC
Schottky diodes by inserting an ultrathin a-SiC: H layer and the influence of annealing at …
Schottky diodes by inserting an ultrathin a-SiC: H layer and the influence of annealing at …