Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …

The realization of a silicon optical phase shifter marked a cornerstone for the development of
silicon photonics, and it is expected that optical interconnects based on the technology relax …

Recently a novel photonic integration technology, based on a thin InP-based membrane, is
emerging. This technology offers monolithic integration of active and passive functions in a …

Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …

A new process to produce orientation-patterned gallium phosphide (OP-GaP) on GaAs with
almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical …

We present a novel optical phase modulation scheme on a Si photonic platform that uses a
III–V/Si hybrid metal–oxide–semiconductor (MOS) capacitor formed by bonding an n-type …

Infrared detection and imaging are key enabling technologies for a vast number of
applications, ranging from communication, to medicine and astronomy, and have recently …

Owing to its true direct bandgap and tunable bandgap energies, GeSn alloys are
increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated …

Monolithic 3-D integration has emerged as a promising technological solution for traditional
transistor scaling limitations and interconnection bottleneck. The challenge we must …

Anisotropic two-dimensional materials provide promising platforms for polarization-driven
optoelectronic and photonic devices. In particular, layered rhenium disulfide (Re S 2) has …