Emerging technologies, such as smart wearable devices, augmented reality (AR)/virtual
reality (VR) displays, and naked-eye 3D projection, have gradually entered our lives …

Over the past decade, advances in LEDs have enabled the potential for wide-scale
replacement of traditional lighting with solid-state light sources. If LED performance targets …

Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal
quantum efficiency with increasing injection current. This droop phenomenon is currently the …

The efficiency droop in GaInN∕ GaN multiple-quantum well (MQW) light-emitting diodes is
investigated. Measurements show that the efficiency droop, occurring under high injection …

The Auger recombination coefficient in quasi-bulk In x Ga 1− x N (x∼ 9%–15%) layers
grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in …

Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and
polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor …

Measurements of light-output power versus current are performed for Ga In N∕ Ga N light-
emitting diodes grown on GaN-on-sapphire templates with different threading dislocation …

Auger recombination is determined to be the limiting factor for quantum efficiency for InGaN–
GaN (0001) light-emitting diodes (LEDs) at high current density. High-power double …

This paper reviews current technological developments in polarization engineering and the
control of the quantum-confined Stark effect (QCSE) for InxGa 1-xN-based quantum-well …

To study the size effect of AlGaInP red micro-LEDs on the silicon substrate, we fabricated
five AlGaInP red micro-LEDs with different pixel sizes (160× 160, 80× 80, 40× 40, 20× 20 …