Self-trapped excitons (STEs) have attracted tremendous attention due to their intriguing
properties and potential optoelectronic applications. STEs are formed from the lattice …

Optically active defects in modified silicon oxide films on a silicon substrate have been
studied by low-temperature photoluminescence (PL) spectroscopy using excitation by …

The fatigue damage behavior of antireflective coating over KDP crystal under vacuum
environment was studied with varied UV-laser irradiation, and the dynamic process from …

In this work we present an innovative method of creating Si quantum dots under pulsed ion-
beam exposure. The evolution of defect structure ODC (II)→ E′→ ODC (I)→ Si QDs in …

Temperature effects in the exciton photoluminescence specific to semiconductor quantum
dots (QDs) are reviewed using Si QDs as an example. The processes of direct and indirect …

Abstract Structures with Ge/Si nanoparticles (quantum dots) in an aluminum-oxide matrix are
of interest due to the combination of two basic semiconductors and the use of a matrix with a …

The combined X-ray absorption and emission spectroscopy approach was applied for the
detailed electronic structure and composition studies of silicon nanoparticles produced by …

Temperature effects in the exciton photoluminescence specific to semiconductor quantum
dots (QDs) are reviewed using Si QDs as an example. The processes of direct and indirect …

Структуры с наночастицами (квантовыми точками) Ge/Si в матрице оксида алюминия
интересны для исследователей благодаря сочетанию двух основных полупроводников …

Temperature effects in the exciton photoluminescence specific to semiconductor quantum
dots (QDs) are reviewed using Si QDs as an example. The processes of direct and indirect …