Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …

Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field
strength, making it especially attractive for high-power and high-temperature devices …

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

Silicon carbide (SiC) has been around for more than 100 years as an industrial material and
has found wide and varied applications because of its unique electrical and thermal …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Over the years, the fundamentals of VLSI technology have evolved to include a wide range
of topics and a broad range of practices. To encompass such a vast amount of knowledge …

In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …

Silicon carbide (SiC) is a fascinating material. In one way, it is very simple; there are only two
atoms building up the crystal—silicon and carbon, where each atom is sp3-hybridized and …

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown
to enable superior material quality and high performance devices based on wide bandgap …

WIDE BANDGAP semiconductor, particularly Silicon Carbide (SiC), based electronic
devices and circuits are presently being developed for use in high-temperature, high-power …