Synthesis of nanomaterials using bottom-up methods
Nanomaterials, due to their dimensions, enable most if not all atoms to be involved
catalytically. Due to this, nanomaterials exhibit optoelectronic properties, which are absent in …
catalytically. Due to this, nanomaterials exhibit optoelectronic properties, which are absent in …
Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures
We report the successful realisation of intrinsic optical polarisation control by growth, in solid-
state quantum dots in the thermoelectrically cooled temperature regime (≥ 200 K), using a …
state quantum dots in the thermoelectrically cooled temperature regime (≥ 200 K), using a …
Non-polar InGaN quantum dots: polarisation-controlled semiconductor single-photon sources at on-chip temperatures
T Wang - 2019 - ora.ox.ac.uk
Polarisation-controlled single-photon sources are at the heart of quantum information
applications, eg truly secure communication with polarisation-based quantum key …
applications, eg truly secure communication with polarisation-based quantum key …
[PDF][PDF] Simulation des propriétés physiques des alliages binaires semiconducteurs introduits dans les applications technologiques
I CHEIKH, A BAYA - 2022 - univ-tissemsilt.dz
Résumé Le présent travail présente une simulation numérique des propriétés physiques du
phosphorure d'indium (InP). Cette simulation été menée en utilisant la méthode FP-LAPW …
phosphorure d'indium (InP). Cette simulation été menée en utilisant la méthode FP-LAPW …
Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 m …
F Besahraoui, MH Bouslama, L Bouzaiene… - … Journal of Modern …, 2016 - World Scientific
With the help of photoluminescence Spectroscopy (PLS), we have investigated the
optoelectronic properties of two different families of InAs quantum dashes (QDashes) grown …
optoelectronic properties of two different families of InAs quantum dashes (QDashes) grown …
Evidence of lateral coupling phenomenon in self-assembled InAs/InP (001) quantum dots characterized by photoluminescence spectroscopy (PLS)
F Besahraoui, M Bouslama, M Ghafour… - 2014 North African …, 2014 - ieeexplore.ieee.org
We have characterized with photoluminescence spectroscopy (PLS) the optoelectronic
properties of self-assembled InAs quantum islands (QIs) grown on InP (001) substrate …
properties of self-assembled InAs quantum islands (QIs) grown on InP (001) substrate …