Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

Negative-capacitance transistors use ferroelectric (FE) material in the gate-stack to improve
the transistor performance. The extent of the improvement depends on the capacitance …

Al 0.68 Sc 0.32 N (AlScN) has gained attention for its outstanding ferroelectric properties,
including a high coercive field and high remnant polarization. Although AlScN-based …

The present article deals with the analytical modeling of threshold voltage of an ultra-thin
nanotube Junctionless double-gate-all-around (NJL-DGAA) metal-oxide-semiconductor field …

We investigate the impact of inner fringing fields on the negative capacitance FinFET (NC-
FinFET) and how this scales with the technology node. The 8-/7-nm technology node of the …

With the constant increase in power dissipation of nanoscale transistors, the almost four-
decade-old cycle of performance advancement in complementary metal–oxide …

Recently, increasing power leakage has become a major concern especially in MOSFET
based nanoscale devices due to poor gate control. To mitigate these problems, the devices …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

In this study, the negative drain-induced barrier lowering (DIBL) and negative differential
resistance (NDR) effects are investigated in detail in negative-capacitance field-effect …

There are vital challenges to harness the unique assets of germanium (Ge) because of Ge-
on-insulator (GeOI) processing issues. The advances in molecular beam epitaxy (MBE) …